Origin of traps and charge transport mechanism in hafnia
| dc.citation.issue | 22 | en_US |
| dc.citation.volume | 105 | en_US |
| dc.citation.woscount | 3 | en_US |
| dc.contributor.author | Islamov, D. R. | en_US |
| dc.contributor.author | Gritsenko, V. A. | en_US |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Chin, A. | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2015-07-21T11:20:24Z | |
| dc.date.available | 2015-07-21T11:20:24Z | |
| dc.date.issued | 2014-12-01 | en_US |
| dc.description.abstract | In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25 eV in HfO2 was determined based on the charge transport experiments. (C) 2014 AIP Publishing LLC. | en_US |
| dc.identifier.doi | 10.1063/1.4903169 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4903169 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/124103 | |
| dc.identifier.wosnumber | WOS:000346265200061 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Origin of traps and charge transport mechanism in hafnia | en_US |
| dc.type | Article | en_US |