TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS)
| dc.citation.epage | 381 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 379 | en_US |
| dc.citation.volume | 14 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | WU, SL | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:25Z | |
| dc.date.available | 2014-12-08T15:04:25Z | |
| dc.date.issued | 1993-08-01 | en_US |
| dc.description.abstract | This letter presents a textured tunnel oxide, TOPS, prepared by thermally oxidizing a thin polysilicon film on a Si substrate. Due to the rapid diffusion of oxygen through the grain boundaries of the thin polysilicon into Si substrate and the enhanced oxidation rate at the grain boundaries, a textured Si/SiO2 interface is obtained. The textured interface results in the localized high fields and enhances electron injection into TOPS. The TOPS exhibits a higher electron injection efficiency, a better immunity to the electron trapping and the interface state generation under the high-field operation, and a higher asymmetric injection polarity as compared to the normal oxide. | en_US |
| dc.identifier.doi | 10.1109/55.225585 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.225585 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2922 | |
| dc.identifier.wosnumber | WOS:A1993LQ00900004 | |
| dc.language.iso | en_US | en_US |
| dc.title | TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS) | en_US |
| dc.type | Article | en_US |