DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES
| dc.citation.epage | 625 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 623 | en_US |
| dc.citation.volume | 12 | en_US |
| dc.citation.woscount | 21 | |
| dc.contributor.author | HSU, SL | en_US |
| dc.contributor.author | LIU, LM | en_US |
| dc.contributor.author | LIN, MS | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:06Z | |
| dc.date.available | 2014-12-08T15:05:06Z | |
| dc.date.issued | 1991-11-01 | en_US |
| dc.description.abstract | The increase of the "effective" gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and annealed W polycide are analyzed by secondary ion mass spectrometry, transmission electron microscopy (TEM), and high-frequency CV measurements. The TEM cross section shows that the gate oxide thicknesses are approximately 244 and approximately 285 angstrom for as-deposited and 1000-degrees-C annealed samples, respectively. The TEM results agree with that from CV measurements. The TEM analyses provide a direct physical evidence of an additional oxide thickness (approximately 41 angstrom) during the W-polycide annealing. | en_US |
| dc.identifier.doi | 10.1109/55.119218 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.119218 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3648 | |
| dc.identifier.wosnumber | WOS:A1991GL47900015 | |
| dc.language.iso | en_US | en_US |
| dc.title | DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES | en_US |
| dc.type | Article | en_US |