Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment
| dc.citation.epage | en_US | |
| dc.citation.issue | 14 | en_US |
| dc.citation.volume | 104 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Yang, Chan-Shan | en_US |
| dc.contributor.author | Tang, Tsung-Ta | en_US |
| dc.contributor.author | Pan, Ru-Pin | en_US |
| dc.contributor.author | Yu, Peichen | en_US |
| dc.contributor.author | Pan, Ci-Ling | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:35:51Z | |
| dc.date.available | 2014-12-08T15:35:51Z | |
| dc.date.issued | 2014-04-07 | en_US |
| dc.description.abstract | Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding pi/2 at 1.0 THz was achieved in a similar to 517 mu m-thick cell. The phase shifter exhibits high transmittance (similar to 78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies. (C) 2014 AIP Publishing LLC. | en_US |
| dc.identifier.doi | 10.1063/1.4871255 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4871255 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/24243 | |
| dc.identifier.wosnumber | WOS:000334849200006 | |
| dc.language.iso | en_US | en_US |
| dc.title | Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment | en_US |
| dc.type | Article | en_US |