Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
| dc.citation.epage | 205 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 203 | en_US |
| dc.citation.volume | 23 | en_US |
| dc.citation.woscount | 37 | |
| dc.contributor.author | Chen, SB | en_US |
| dc.contributor.author | Lai, CH | en_US |
| dc.contributor.author | Chan, KT | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Hsieh, JC | en_US |
| dc.contributor.author | Liu, J | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:34Z | |
| dc.date.available | 2014-12-08T15:42:34Z | |
| dc.date.issued | 2002-04-01 | en_US |
| dc.description.abstract | We have characterized the capacitance and loss tangent for high-k Al2O3 and AlTiOx gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO2 was demonstrated individually by the proposed Al2O3 and AlTiOx gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO2 from 100 KHz to 20 GHz. These results suggest that both Al2O3 and AlTiOx are suitable for next generation MOSFET application into RF frequency regime. | en_US |
| dc.identifier.doi | 10.1109/55.992839 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.992839 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28901 | |
| dc.identifier.wosnumber | WOS:000174667800013 | |
| dc.language.iso | en_US | en_US |
| dc.subject | dielectric constant | en_US |
| dc.subject | frequency dependence | en_US |
| dc.subject | high k | en_US |
| dc.subject | loss tangent | en_US |
| dc.subject | RF | en_US |
| dc.title | Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range | en_US |
| dc.type | Article | en_US |