Growth and characterization of topological insulator Bi2Se3 thin films on SrTiO3 using pulsed laser deposition
| dc.citation.epage | 665 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 659 | en_US |
| dc.citation.volume | 534 | en_US |
| dc.citation.woscount | 10 | |
| dc.contributor.author | Phuoc Huu Le | en_US |
| dc.contributor.author | Wu, Kaung Hsiung | en_US |
| dc.contributor.author | Luo, Chih Wei | en_US |
| dc.contributor.author | Leu, Jihperng | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:30:13Z | |
| dc.date.available | 2014-12-08T15:30:13Z | |
| dc.date.issued | 2013-05-01 | en_US |
| dc.description.abstract | Bismuth selenide (Bi2Se3) thin films were grown on SrTiO3(111) (STO) substrates using pulsed laser deposition (PLD). The structural, morphological, electrical, and transport properties were studied at various substrate temperatures (T-S) from 120 to 350 degrees C. Amorphous films grown at T-S < 180 degrees C exhibited semiconducting behavior, and highly c-axis-oriented textured films deposited at T-S >= 180 degrees C exhibited metallic behavior. Bi2Se3 thin-films were epitaxially grown on STO substrates at 300 and 350 degrees C. Thickness-dependent characteristics were also investigated for optimized Bi2Se3 films deposited at T-S = 230 degrees C. The semiconducting or metallic characteristics of Bi2Se3 films prepared using PLD were observed through electrical and transport results. (C) 2013 Elsevier B. V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.tsf.2013.01.104 | en_US |
| dc.identifier.issn | 0040-6090 | en_US |
| dc.identifier.journal | THIN SOLID FILMS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2013.01.104 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21653 | |
| dc.identifier.wosnumber | WOS:000317736700111 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Bi2Se3 | en_US |
| dc.subject | Topological insulator | en_US |
| dc.subject | Thin film | en_US |
| dc.subject | Pulsed laser deposition | en_US |
| dc.subject | SrTiO3 substrate | en_US |
| dc.title | Growth and characterization of topological insulator Bi2Se3 thin films on SrTiO3 using pulsed laser deposition | en_US |
| dc.type | Article | en_US |