Two-channel Kondo effects in Al/AlOx/Sc planar tunnel junctions
| dc.citation.epage | 0 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.volume | 79 | en_US |
| dc.citation.woscount | 9 | en_US |
| dc.contributor.author | Yeh, Sheng-Shiuan | en_US |
| dc.contributor.author | Lin, Juhn-Jong | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Institute of Physics | en_US |
| dc.date.accessioned | 2019-04-03T06:42:35Z | |
| dc.date.available | 2019-04-03T06:42:35Z | |
| dc.date.issued | 2009-01-01 | en_US |
| dc.description.abstract | We have measured the differential conductances G(V, T) in several Al/AlOx/Sc planar tunnel junctions between 2 and 35 K. As the temperature decreases to similar to 16 K, the zero-bias conductance G(0, T) crosses over from a standard -ln T dependence to a novel -root T dependence. Correspondingly, the finite bias conductance G(V, T) reveals a two-channel Kondo scaling behavior between similar to 4 and 16 K. The observed two-channel Kondo physics is ascribed to originating from a few localized spin-1/2 Sc atoms situated slightly inside the AlOx/Sc interface. | en_US |
| dc.identifier.doi | 10.1103/PhysRevB.79.012411 | en_US |
| dc.identifier.issn | 1098-0121 | en_US |
| dc.identifier.journal | PHYSICAL REVIEW B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.79.012411 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/149739 | |
| dc.identifier.wosnumber | WOS:000262977900017 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Two-channel Kondo effects in Al/AlOx/Sc planar tunnel junctions | en_US |
| dc.type | Article | en_US |