以高分子作為感應偶合電漿反應離子蝕刻側壁保護層以製作單晶矽懸浮微結構之快速製程平台研發
| dc.contributor.author | 徐文祥 | en_US |
| dc.contributor.author | HSU WENSYANG | en_US |
| dc.contributor.department | 國立交通大學機械工程學系（所） | zh_TW |
| dc.date.accessioned | 2014-12-13T10:43:18Z | |
| dc.date.available | 2014-12-13T10:43:18Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC100-2221-E009-034 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=2328558&docId=365245 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/99658 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 感應耦合電漿 | zh_TW |
| dc.subject | 乾蝕刻 | zh_TW |
| dc.subject | 高分子 | zh_TW |
| dc.subject | 保護層 | zh_TW |
| dc.subject | 懸浮 | zh_TW |
| dc.subject | 單晶矽 | zh_TW |
| dc.subject | ICP | en_US |
| dc.subject | dry etching | en_US |
| dc.subject | polymer | en_US |
| dc.subject | passivation | en_US |
| dc.subject | suspended | en_US |
| dc.subject | SCS | en_US |
| dc.title | 以高分子作為感應偶合電漿反應離子蝕刻側壁保護層以製作單晶矽懸浮微結構之快速製程平台研發 | zh_TW |
| dc.title | Development a Rapid Fabrication Platform for Suspended Single-Crystal-Silicon Microstructures by Icp-Rie with Polymer as Side-Wall Protection Layer | en_US |
| dc.type | Plan | en_US |