Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
| dc.citation.epage | en_US | |
| dc.citation.issue | 1 | en_US |
| dc.citation.volume | 52 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Van-Truong Dai | en_US |
| dc.contributor.author | Lin, Sheng-Di | en_US |
| dc.contributor.author | Lin, Shih-Wei | en_US |
| dc.contributor.author | Wu, Jau-Yang | en_US |
| dc.contributor.author | Li, Liang-Chen | en_US |
| dc.contributor.author | Lee, Chien-Ping | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| dc.date.accessioned | 2014-12-08T15:28:44Z | |
| dc.date.available | 2014-12-08T15:28:44Z | |
| dc.date.issued | 2013-01-01 | en_US |
| dc.description.abstract | A lateral two-dimensional p-i-n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. The optical and electrical characteristics of the junction are reported. The threshold voltage of the junction and the electroluminescence spectrum of the quantum well confirm the formation of the lateral two-dimensional junction. (C) 2013 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/JJAP.52.014001 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.52.014001 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20795 | |
| dc.identifier.wosnumber | WOS:000312731500025 | |
| dc.language.iso | en_US | en_US |
| dc.title | Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well | en_US |
| dc.type | Article | en_US |