Growth of polycrystalline tubular silicon carbide Yajima-type reaction at the vapor-solid interface
| dc.citation.epage | 3962 | en_US |
| dc.citation.issue | 16 | en_US |
| dc.citation.spage | 3956 | en_US |
| dc.citation.volume | 19 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | Wang, Chia-Hsin | en_US |
| dc.contributor.author | Lin, Huang-Kai | en_US |
| dc.contributor.author | Ke, Tsung-Ying | en_US |
| dc.contributor.author | Palathinkal, Thomas-Joseph | en_US |
| dc.contributor.author | Tai, Nyan-Hwa | en_US |
| dc.contributor.author | Lin, I-Nan | en_US |
| dc.contributor.author | Lee, Chi-Young | en_US |
| dc.contributor.author | Chiu, Hsin-Tien | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:13:31Z | |
| dc.date.available | 2014-12-08T15:13:31Z | |
| dc.date.issued | 2007-08-07 | en_US |
| dc.description.abstract | Polycrystalline tubular SiC on Si is prepared by reacting MeSiHCl2 vapor and Ca thin film on Si at 773-923 K followed by heat treatment at 1273 K. The reaction is a solvent-free Yajima-type process taking place at the vapor-solid interface. The products phase-segregate into a cable-like radial heterostructure composed of a core of CaCl2 and a shell of SiCxHy. After removal of the CaCl2 core, the layer of polycrystalline SiC tubes on Si can emit electrons at a low applied field of 2.5 V/mu m with a current of 10 mu A/cm(2). | en_US |
| dc.identifier.doi | 10.1021/cm070925e | en_US |
| dc.identifier.issn | 0897-4756 | en_US |
| dc.identifier.journal | CHEMISTRY OF MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1021/cm070925e | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10449 | |
| dc.identifier.wosnumber | WOS:000248439400016 | |
| dc.language.iso | en_US | en_US |
| dc.title | Growth of polycrystalline tubular silicon carbide Yajima-type reaction at the vapor-solid interface | en_US |
| dc.type | Article | en_US |