Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap
| dc.citation.epage | 1882 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 1873 | en_US |
| dc.citation.volume | 57 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Watanabe, Hiroshi | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:48:37Z | |
| dc.date.available | 2014-12-08T15:48:37Z | |
| dc.date.issued | 2010-08-01 | en_US |
| dc.description.abstract | The single-electron general-purpose device simulator is improved to carry out a wide-range transient analysis from 1 ps to 10 years. We apply this simulator to a floating gate (FG) nonvolatile memory cell in order to simulate a degradation mode of data retention owing to the direct tunneling enhanced by the fixed charge stored by a local trap in an interpoly dielectric. The scaling impact of ideal high-K interpoly dielectric FG nonvolatile memory cell is also investigated. | en_US |
| dc.identifier.doi | 10.1109/TED.2010.2051248 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2010.2051248 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32336 | |
| dc.identifier.wosnumber | WOS:000283382800018 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Coulomb oscillation | en_US |
| dc.subject | device modeling | en_US |
| dc.subject | device simulation | en_US |
| dc.subject | floating gate (FG) | en_US |
| dc.subject | local trap | en_US |
| dc.subject | memory | en_US |
| dc.subject | modeling | en_US |
| dc.subject | single-electron sensitivity | en_US |
| dc.subject | TCAD | en_US |
| dc.subject | trap-assisted tunneling | en_US |
| dc.title | Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap | en_US |
| dc.type | Article | en_US |