電漿製程天線效應對超薄閘氧化層電晶體特性影響之研究
| dc.contributor.author | 林鴻志 | en_US |
| dc.contributor.author | HORNG-CHIHLIN | en_US |
| dc.contributor.department | 國立交通大學毫微米實驗室 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:06Z | |
| dc.date.available | 2014-12-13T10:37:06Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2215-E317-005 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=428978&docId=76777 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94383 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 天線效應 | zh_TW |
| dc.subject | 電漿製程 | zh_TW |
| dc.subject | 超薄閘 | zh_TW |
| dc.subject | 氧化層 | zh_TW |
| dc.subject | 充電損害 | zh_TW |
| dc.subject | 深次微米 | zh_TW |
| dc.subject | 光阻 | zh_TW |
| dc.subject | 灰化 | zh_TW |
| dc.subject | Antenna effect | en_US |
| dc.subject | Plasma process | en_US |
| dc.subject | Ultrathin gate | en_US |
| dc.subject | Oxided layer | en_US |
| dc.subject | Charging damage | en_US |
| dc.subject | Deep submicrometer | en_US |
| dc.subject | Photo resistance | en_US |
| dc.subject | Ashing | en_US |
| dc.title | 電漿製程天線效應對超薄閘氧化層電晶體特性影響之研究 | zh_TW |
| dc.title | Study of Plasma Antenna Effect in Ultrathin Gate Oxides | en_US |
| dc.type | Plan | en_US |