THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS
| dc.citation.epage | 390 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 389 | en_US |
| dc.citation.volume | 15 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | YANG, CK | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:46Z | |
| dc.date.available | 2014-12-08T15:03:46Z | |
| dc.date.issued | 1994-10-01 | en_US |
| dc.description.abstract | The low pressure NH3-annealing and the H-2. plasma hydrogenation were jointly used to improve the characteristics of polysilicon thin-film transistors (TFT's). It was found that the TFT's after applying the above treatments achieved better subthreshold swings, threshold voltages, field effect mobilities, off currents, and reliability. It is believed that the improvement was due to the gate oxynitride formation and the H-2-plasma had a better passivation effect on the oxynitride. | en_US |
| dc.identifier.doi | 10.1109/55.320977 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.320977 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2305 | |
| dc.identifier.wosnumber | WOS:A1994PL26900006 | |
| dc.language.iso | en_US | en_US |
| dc.title | THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS | en_US |
| dc.type | Article | en_US |