Nanoindentation-Induced Pop-In Effects in GaN Thin Films
| dc.citation.epage | 308 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 304 | en_US |
| dc.citation.volume | 12 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Jian, Sheng-Rui | en_US |
| dc.contributor.author | Juang, Jenh-Yih | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:30:40Z | |
| dc.date.available | 2014-12-08T15:30:40Z | |
| dc.date.issued | 2013-05-01 | en_US |
| dc.description.abstract | The nanoindentation-induced pop-in phenomena in GaN thin film are investigated using Berkovich indenters. The formation of dislocation rosettes revealed by cathodoluminescence (CL) spectroscopy is found to closely relate with the pop-in effect displayed in depth-sensitive measurements. Namely, the CL images of the indented spots show well-defined rosette structures consistent with the hexagonal symmetry of GaN, indicating that the distribution of deformation-induced extended defects/dislocations may dramatically affect the CL emission. The use of CL thus may provide an alternative means for studying the near-surface plasticity in other semiconductor thin films, as well. | en_US |
| dc.identifier.doi | 10.1109/TNANO.2013.2240313 | en_US |
| dc.identifier.issn | 1536-125X | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TNANO.2013.2240313 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21899 | |
| dc.identifier.wosnumber | WOS:000319009300005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Cathodoluminescence (CL) | en_US |
| dc.subject | GaN thin films | en_US |
| dc.subject | nanoindentation | en_US |
| dc.subject | pop-in | en_US |
| dc.title | Nanoindentation-Induced Pop-In Effects in GaN Thin Films | en_US |
| dc.type | Article | en_US |