QUANTUM-WELL GEOMETRICAL EFFECTS ON 2-DIMENSIONAL ELECTRON-MOBILITY
| dc.citation.epage | 1599 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 1597 | en_US |
| dc.citation.volume | 35 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | WANG, TH | en_US |
| dc.contributor.author | HSIEH, TH | en_US |
| dc.contributor.author | CHEN, YT | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:04:45Z | |
| dc.date.available | 2014-12-08T15:04:45Z | |
| dc.date.issued | 1992-11-01 | en_US |
| dc.description.abstract | A Monte Carlo analysis to study the quantization effects on the low-field electron mobility in various AlGaAs/GaAs/AlGaAs quantum well structures has been performed. The influence of the electron envelop wave-function and the subband structure on the two-dimensional electron scattering rates was evaluated. Our results showed that a maximum two-dimensional electron mobility can be achieved in a quantum well structure where the energy difference between the first subband and the second subband is about two times the polar optical phonon energy. | en_US |
| dc.identifier.doi | 10.1016/0038-1101(92)90185-F | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/0038-1101(92)90185-F | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3255 | |
| dc.identifier.wosnumber | WOS:A1992JT08100005 | |
| dc.language.iso | en_US | en_US |
| dc.title | QUANTUM-WELL GEOMETRICAL EFFECTS ON 2-DIMENSIONAL ELECTRON-MOBILITY | en_US |
| dc.type | Article | en_US |
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