PRE-OXIDATION GETTERING OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON BY THE PHOSPHORUS DIFFUSION PROCESS
| dc.citation.epage | 560 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 555 | en_US |
| dc.citation.volume | 47 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | CHEN, JH | en_US |
| dc.contributor.author | CHEN, MC | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:32Z | |
| dc.date.available | 2014-12-08T15:06:32Z | |
| dc.date.issued | 1979 | en_US |
| dc.identifier.issn | 0020-7217 | en_US |
| dc.identifier.journal | INTERNATIONAL JOURNAL OF ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5098 | |
| dc.identifier.wosnumber | WOS:A1979JN25800004 | |
| dc.language.iso | en_US | en_US |
| dc.title | PRE-OXIDATION GETTERING OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON BY THE PHOSPHORUS DIFFUSION PROCESS | en_US |
| dc.type | Article | en_US |
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