A comparative study of electrical characteristic on sub-10-nm double-gate MOSFETs

Abstract

We explore the structure effect on electrical characteristics of sub-10-nm double-gate metal-oxide-semiconductor field-effect transistors (DG MOSFETs). To quantitatively assess the nanoscale DG MOSFETs' characteristics, the on/off current ratio, subthreshold swing, threshold voltage (V-th), and drain-induced barrier-height lowering are numerically calculated for the device with different channel length (L) and the thickness of silicon film (T-si). Based on our two-dimensional density gradient simulation, it is found that, to maintain optimal device characteristics and suppress short channel effects (SCEs) for nanoscale DG MOSFETs, T-si should be simultaneously scaled down with respect to L. From a practical fabrication point-of-view, a DG MOSFET with ultrathin T-si will suppress the SCE, but suffers the fabrication process and on-state current issues. Simulation results suggest that L/T-si >= 1 may provide a good alternative in eliminating SCEs of double-gate-based nanodevices.