Enhanced vertical extraction efficiency from a thin-film InGaN-GaN light-emitting diode using a 2-D photonic crystal and an omnidirectional reflector
| dc.citation.epage | 838 | en_US |
| dc.citation.issue | 9-12 | en_US |
| dc.citation.spage | 836 | en_US |
| dc.citation.volume | 20 | en_US |
| dc.citation.woscount | 14 | |
| dc.contributor.author | Lin, C. H. | en_US |
| dc.contributor.author | Yen, H. H. | en_US |
| dc.contributor.author | Lai, C. F. | en_US |
| dc.contributor.author | Huang, H. W. | en_US |
| dc.contributor.author | Chao, C. H. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Lu, T. C. | en_US |
| dc.contributor.author | Wang, S. C. | en_US |
| dc.contributor.author | Leung, K. M. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:15Z | |
| dc.date.available | 2014-12-08T15:12:15Z | |
| dc.date.issued | 2008-05-01 | en_US |
| dc.description.abstract | An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO2-SiO2 onmidirectional reflector on the bottom was fabricated. The device was investigated by performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongly modified by the PC to have a significantly narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings. | en_US |
| dc.identifier.doi | 10.1109/LPT.2008.921118 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2008.921118 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9410 | |
| dc.identifier.wosnumber | WOS:000256966100057 | |
| dc.language.iso | en_US | en_US |
| dc.subject | light-emitting diode (LED) | en_US |
| dc.subject | onmidirectional reflector (ODR) | en_US |
| dc.subject | photonic crystal (PC) | en_US |
| dc.title | Enhanced vertical extraction efficiency from a thin-film InGaN-GaN light-emitting diode using a 2-D photonic crystal and an omnidirectional reflector | en_US |
| dc.type | Article | en_US |