Integrated semiconductor optoelectronic devices for real-time and indicator-free detection of aqueous nitric oxide

Abstract

Sensing films specific to nitric oxide and zinc were fabricated by embedding respectively indicator 1,2-diaminoanthraquinone (DAQ) and 11,16-Bis(phenyl)-6,6,21,21-tetramethyl-m-benzi-6,21-porphodimethene (BPDM-H) in hydrogel host poly(2-hydroxyethyl methacrylate). The sensing film contains DAQ, which responses to nitric oxide, shows stability in acid environment. The sensing film contains BPDM-H responses to zinc. The electrospinning technique was also utilized to fabricate the fibrous film.