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Integrated semiconductor optoelectronic devices for real-time and indicator-free detection of aqueous nitric oxide

dc.citation.epage0en_US
dc.citation.spage0en_US
dc.citation.volume8118en_US
dc.citation.woscount0en_US
dc.contributor.authorWang, Shin-Pingen_US
dc.contributor.authorCheng, Yi-Kaien_US
dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorChang, Gao-Fongen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorHung, Chen-Hsiungen_US
dc.contributor.authorChen, Wen-Changen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2019-04-03T06:47:36Z
dc.date.available2019-04-03T06:47:36Z
dc.date.issued2011-01-01en_US
dc.description.abstractSensing films specific to nitric oxide and zinc were fabricated by embedding respectively indicator 1,2-diaminoanthraquinone (DAQ) and 11,16-Bis(phenyl)-6,6,21,21-tetramethyl-m-benzi-6,21-porphodimethene (BPDM-H) in hydrogel host poly(2-hydroxyethyl methacrylate). The sensing film contains DAQ, which responses to nitric oxide, shows stability in acid environment. The sensing film contains BPDM-H responses to zinc. The electrospinning technique was also utilized to fabricate the fibrous film.en_US
dc.identifier.doi10.1117/12.893012en_US
dc.identifier.isbn978-0-81948-728-5en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.journalORGANIC SEMICONDUCTORS IN SENSORS AND BIOELECTRONICS IVen_US
dc.identifier.urihttp://dx.doi.org/10.1117/12.893012en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/150545
dc.identifier.wosnumberWOS:000297625300003en_US
dc.language.isoen_USen_US
dc.subjectprobeen_US
dc.subjectorganic electronic devicesen_US
dc.titleIntegrated semiconductor optoelectronic devices for real-time and indicator-free detection of aqueous nitric oxideen_US
dc.typeProceedings Paperen_US

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