Organic thin film transistors with novel solution-process polymeric gate insulators

Abstract

Novel OTFTs polymeric gate dielectric insulators derived from PMMA and PVP, named PHE, POH and F3, were demonstrated. By using the novel insulators, those OTFTs showed acceptable electrical characteristics including higher on/off ratio of five order of magnitude, low subthreshold swing about 2 V/decade and mobility around 0.1 cm(2)/Vs. F3 based devices, especially have the most stable I-V and C-V characteristics to replace PVP.