Organic thin film transistors with novel solution-process polymeric gate insulators

dc.citation.epage	380	en_US
dc.citation.spage	377	en_US
dc.contributor.author	Tsai, Yan-Chu	en_US
dc.contributor.author	Tsai, Shu-Ting	en_US
dc.contributor.author	Chuang, Chiao-Shun	en_US
dc.contributor.author	Cheng, Jung-An	en_US
dc.contributor.author	Chen, Fang-Chung	en_US
dc.contributor.author	Shieh, Han-Ping D.	en_US
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Institute of Display	en_US
dc.date.accessioned	2014-12-08T15:11:56Z
dc.date.available	2014-12-08T15:11:56Z
dc.date.issued	2007	en_US
dc.description.abstract	Novel OTFTs polymeric gate dielectric insulators derived from PMMA and PVP, named PHE, POH and F3, were demonstrated. By using the novel insulators, those OTFTs showed acceptable electrical characteristics including higher on/off ratio of five order of magnitude, low subthreshold swing about 2 V/decade and mobility around 0.1 cm(2)/Vs. F3 based devices, especially have the most stable I-V and C-V characteristics to replace PVP.	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/9157
dc.identifier.wosnumber	WOS:000258177700096
dc.language.iso	en_US	en_US
dc.title	Organic thin film transistors with novel solution-process polymeric gate insulators	en_US
dc.type	Proceedings Paper	en_US

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