超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度分析---子計畫II：退火製程對超高真空化學氣相沈積法成長之複晶矽薄膜結構的影響與退火複晶矽薄膜電晶體的製作 (II)

dc.contributor.author	馮明憲	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
dc.date.accessioned	2014-12-13T10:48:01Z
dc.date.available	2014-12-13T10:48:01Z
dc.date.issued	2000	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC89-2215-E009-007	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=542196&docId=99609	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/101226
dc.language.iso	zh_TW	en_US
dc.subject	退火效應	zh_TW
dc.subject	薄膜電晶體	zh_TW
dc.subject	複晶矽	zh_TW
dc.subject	Annealing effect	en_US
dc.subject	Thin film transistor	en_US
dc.subject	Polysilicon	en_US
dc.title	超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度分析---子計畫II：退火製程對超高真空化學氣相沈積法成長之複晶矽薄膜結構的影響與退火複晶矽薄膜電晶體的製作 (II)	zh_TW
dc.title	Annealing Effects on UHVCVD Polysilicon Thin-Film Structure and Fabrication of Annealed Polysilicon TFT (II)	en_US
dc.type	Plan	en_US

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