GaN-based photonic crystal surface emitting lasers with central defects
| dc.citation.epage | en_US | |
| dc.citation.issue | 22 | en_US |
| dc.citation.volume | 99 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Wu, Tzeng-Tsong | en_US |
| dc.contributor.author | Weng, Peng-Hsiang | en_US |
| dc.contributor.author | Hou, Yen-Ju | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:21:13Z | |
| dc.date.available | 2014-12-08T15:21:13Z | |
| dc.date.issued | 2011-11-28 | en_US |
| dc.description.abstract | The GaN-based photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The threshold energy densities increased from 3.23 to 3.51 mJ/cm(2) when the central defect size increased. In addition, lasing wavelengths decreased from 400 nm to 390 nm due to the guided mode shifting phenomenon for the PCSEL cavities with larger central defects. The tendency of threshold gain and resonance wavelength for PCSELs with different central defects were calculated by the multiple scattering method and well matched to the experimental results. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665251] | en_US |
| dc.identifier.doi | 10.1063/1.3665251 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3665251 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15057 | |
| dc.identifier.wosnumber | WOS:000298244500005 | |
| dc.language.iso | en_US | en_US |
| dc.title | GaN-based photonic crystal surface emitting lasers with central defects | en_US |
| dc.type | Article | en_US |