THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODES
| dc.citation.epage | 2912 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 2909 | en_US |
| dc.citation.volume | 52 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:25Z | |
| dc.date.available | 2014-12-08T15:06:25Z | |
| dc.date.issued | 1981 | en_US |
| dc.identifier.doi | 10.1063/1.329025 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.329025 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4991 | |
| dc.identifier.wosnumber | WOS:A1981LS60400047 | |
| dc.language.iso | en_US | en_US |
| dc.title | THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODES | en_US |
| dc.type | Article | en_US |
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