Electrical resistivities and thermopowers of transparent Sn-doped indium oxide films
| dc.citation.epage | 5920 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 5918 | en_US |
| dc.citation.volume | 96 | en_US |
| dc.citation.woscount | 48 | |
| dc.contributor.author | Li, ZQ | en_US |
| dc.contributor.author | Lin, JJ | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Institute of Physics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:18Z | |
| dc.date.available | 2014-12-08T15:37:18Z | |
| dc.date.issued | 2004-11-15 | en_US |
| dc.description.abstract | We have systematically measured the electrical resistivities and thermopowers of transparent tin-doped indium oxide films. We found that the resistivities obey the Bloch-Gruneisen law between 25 and 300 K, whereas below 25 K, the resistivities slightly increase logarithmically with the decreasing temperature due to the weak-localization and electron-electron interaction effects. The thermopowers are negative and decrease linearly with temperature from 300 K down to 1.8 K. Our results strongly indicate that the tin-doped indium oxide films behave as a good, free-electron-like conductor while being transparent. (C) 2004 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1801153 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1801153 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25635 | |
| dc.identifier.wosnumber | WOS:000224926000088 | |
| dc.language.iso | en_US | en_US |
| dc.title | Electrical resistivities and thermopowers of transparent Sn-doped indium oxide films | en_US |
| dc.type | Article | en_US |