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Selective growth of ZnO nanorods on pre-coated ZnO buffer layer

dc.citation.epage525en_US
dc.citation.issue4en_US
dc.citation.spage520en_US
dc.citation.volume261en_US
dc.citation.woscount35
dc.contributor.authorHsu, HCen_US
dc.contributor.authorTseng, YKen_US
dc.contributor.authorCheng, HMen_US
dc.contributor.authorKuo, JHen_US
dc.contributor.authorHsieh, WFen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:39:39Z
dc.date.available2014-12-08T15:39:39Z
dc.date.issued2004-02-01en_US
dc.description.abstractHexagonal ZnO nanorods have been selectively synthesized via vapor-solid process without gold catalysis on. a precoated ZnO buffer layer. The presence of nanometer-sized pits or hills on the surface of ZnO buffer layer provides nucleation sites to which the zinc vapor is transferred and condensed. Followed by immediate oxidation the ZnO nanorods were grown on the. buffer layer. Contrarily, the SEM images hardly show growth of irregular ZnO nanometer-sized products on the bare sapphire substrate. Besides a strong ultra-violet emission at 3.26 eV observed at room temperature, the coupling strength of the radiative transition to LO-phonon polarization field was deduced in use of the Huang-Rhys factor. from low temperature photoluminescence spectra to show that single crystalline ZnO nanorods. (C) 2003 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jcrysgro.2003.09.040en_US
dc.identifier.issn0022-0248en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2003.09.040en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/27072
dc.identifier.wosnumberWOS:000188547000014
dc.language.isoen_USen_US
dc.subjectgrowth from vaporen_US
dc.subjectnanomaterialsen_US
dc.subjectzinc compoundsen_US
dc.subjectsemiconducting II-VI materialsen_US
dc.titleSelective growth of ZnO nanorods on pre-coated ZnO buffer layeren_US
dc.typeArticleen_US

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