Investigations of pulse current electrodeposition for damascene copper metals
| dc.citation.epage | 2298 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 2295 | en_US |
| dc.citation.volume | 20 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | Chang, SC | en_US |
| dc.contributor.author | Shieh, JM | en_US |
| dc.contributor.author | Dai, BT | en_US |
| dc.contributor.author | Feng, MS | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:41:47Z | |
| dc.date.available | 2014-12-08T15:41:47Z | |
| dc.date.issued | 2002-11-01 | en_US |
| dc.description.abstract | The influence of current density, duty cycle, and frequency of the applied pulse current on film qualities of electroplated copper was discussed. With various filled damascene structures, the corresponding filling power was optimized in a range of pulse current frequency. The optimized pulse current plating in conjunction with a leveler-free electrolyte resulted in a defect-free filling in approximate 100 nm damascenes and reduced the resistivity of Cu deposits. (C) 2002 American Vacuum Society. | en_US |
| dc.identifier.doi | 10.1116/1.1518974 | en_US |
| dc.identifier.issn | 1071-1023 | en_US |
| dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1116/1.1518974 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28416 | |
| dc.identifier.wosnumber | WOS:000180307300022 | |
| dc.language.iso | en_US | en_US |
| dc.title | Investigations of pulse current electrodeposition for damascene copper metals | en_US |
| dc.type | Article | en_US |