1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector
| dc.citation.epage | 162 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 160 | en_US |
| dc.citation.volume | 26 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | Lee, MK | en_US |
| dc.contributor.author | Chu, CH | en_US |
| dc.contributor.author | Wang, YH | en_US |
| dc.contributor.author | Sze, SM | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:15Z | |
| dc.date.available | 2014-12-08T15:44:15Z | |
| dc.date.issued | 2001-02-01 | en_US |
| dc.description.abstract | We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum. The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum, 10-mW laser diode. The corresponding quantum efficiency is 14.4%. (C) 2001 Optical Society of America. | en_US |
| dc.identifier.issn | 0146-9592 | en_US |
| dc.identifier.journal | OPTICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29881 | |
| dc.identifier.wosnumber | WOS:000166755300015 | |
| dc.language.iso | en_US | en_US |
| dc.title | 1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector | en_US |
| dc.type | Article | en_US |