Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure
| dc.citation.epage | G147 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | G144 | en_US |
| dc.citation.volume | 152 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Chang, TC | en_US |
| dc.contributor.author | Liu, PT | en_US |
| dc.contributor.author | Yan, ST | en_US |
| dc.contributor.author | Yang, FM | en_US |
| dc.contributor.author | Sze, SM | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:01Z | |
| dc.date.available | 2014-12-08T15:37:01Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC :O)/oxide sandwiched structure were investigated. The memory window is decreased with the increasing of the oxygen content in the SiC :O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiC :O film, which is attributed to the high barrier height induced by electron trapping in the SiC :O film. (C) 2005 The Electrochemical Society. | en_US |
| dc.identifier.doi | 10.1149/1.1850859 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.1850859 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25434 | |
| dc.identifier.wosnumber | WOS:000227142400066 | |
| dc.language.iso | en_US | en_US |
| dc.title | Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure | en_US |
| dc.type | Article | en_US |