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Deep defect levels and exciton dissociation in conjugated polymers

dc.citation.epage136en_US
dc.citation.issue1-4en_US
dc.citation.spage119en_US
dc.citation.volume304en_US
dc.citation.woscount4
dc.contributor.authorMeng, HFen_US
dc.contributor.authorHong, TMen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.date.accessioned2014-12-08T15:43:30Z
dc.date.available2014-12-08T15:43:30Z
dc.date.issued2001-09-01en_US
dc.description.abstractWe study the localized deep electronic level within the bandgap of conjugated polymers in the presence of structure or oxygen (carbonyl group) defects. The structure defect is modeled as a chain twist, including the chain ends as a special case. Analytic expressions for both the energy and the wavefunction of the deep levels and the itinerant levels are obtained and supplemented by clear intuitive pictures. Carbonyl group is treated numerically within the tight-binding models. The rates of free carrier capture and exciton dissociation through the defect level via multi-phonon emission are calculated. We conclude that the defect dissociation dominates the intrinsic dissociation through thermal activation, and is the primary carrier generation mechanism in photoconductivity, Our results explain the photoconductivity enhancement due to oxidation, as well as the recent observation on the temperature-independent photocurrent in the sweep-out regime. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.identifier.doi10.1016/S0921-4526(01)00344-1en_US
dc.identifier.issn0921-4526en_US
dc.identifier.journalPHYSICA Ben_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4526(01)00344-1en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/29444
dc.identifier.wosnumberWOS:000170591900017
dc.language.isoen_USen_US
dc.subjectdefect levelsen_US
dc.subjectexciton dissociationen_US
dc.subjectconjugated polymersen_US
dc.titleDeep defect levels and exciton dissociation in conjugated polymersen_US
dc.typeArticleen_US

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