超薄氧化層高等可靠性物理暨次世代快閃式記憶體之前瞻性研究
| dc.contributor.author | 陳明哲 | en_US |
| dc.contributor.author | CHEN MING-JER | en_US |
| dc.contributor.department | 國立交通大學電子工程研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:38:50Z | |
| dc.date.available | 2014-12-13T10:38:50Z | |
| dc.date.issued | 2001 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC90-2218-E009-043 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=682105&docId=130199 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/95765 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 超薄氧化層 | zh_TW |
| dc.subject | 可靠性物理 | zh_TW |
| dc.subject | 快閃記憶體 | zh_TW |
| dc.subject | Ultrathin oxide | en_US |
| dc.subject | Reliability physics | en_US |
| dc.subject | Flash memory | en_US |
| dc.title | 超薄氧化層高等可靠性物理暨次世代快閃式記憶體之前瞻性研究 | zh_TW |
| dc.title | Pioneering Study on Ultrathin Oxide Advanced Reliability Physics and Next-Generation Flash Memory | en_US |
| dc.type | Plan | en_US |
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