Selective growth of single InAs quantum dots using strain engineering
| dc.citation.epage | 328 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 326 | en_US |
| dc.citation.volume | 80 | en_US |
| dc.citation.woscount | 19 | |
| dc.contributor.author | Lee, BC | en_US |
| dc.contributor.author | Lin, SD | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.author | Lee, HM | en_US |
| dc.contributor.author | Wu, JC | en_US |
| dc.contributor.author | Sun, KW | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:52Z | |
| dc.date.available | 2014-12-08T15:42:52Z | |
| dc.date.issued | 2002-01-14 | en_US |
| dc.description.abstract | A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved. (C) 2002 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1433169 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1433169 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29070 | |
| dc.identifier.wosnumber | WOS:000173153800055 | |
| dc.language.iso | en_US | en_US |
| dc.title | Selective growth of single InAs quantum dots using strain engineering | en_US |
| dc.type | Article | en_US |