A Wafer-Level Three-Dimensional Integration Scheme With Cu TSVs Based on Microbump/Adhesive Hybrid Bonding for Three-Dimensional Memory Application

Abstract

Thin wafer/chip stacking with vertical interconnect by a Cu through-silicon via (TSV) and a Cu/Sn microjoint is one of the candidates for 3-D integration. The insertion loss of the two-chip stack was evaluated with different TSV pitches, microbump diameters, and chip thicknesses to realize the signal transmission effects in high-speed digital signaling via TSV and microjoint interconnection. In addition, a wafer-level 3-D integration scheme with Cu TSVs based on Cu/Sn microbump and BCB adhesive hybrid bonding was demonstrated. Key technologies, including TSV interconnection, microbumping, hybrid bonding, wafer thinning, and backside RDL formation, were well developed and integrated to realize 3-D integration. This paper presents a complete study of the structure design, the process condition, and the electrical and reliability assessment of the wafer-level 3-D integration scheme. This 3-D integration scheme with excellent electrical performance and reliability provides a promising solution for 3-D memory application.