Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectric
| dc.citation.epage | 730 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 728 | en_US |
| dc.citation.volume | 26 | en_US |
| dc.citation.woscount | 61 | |
| dc.contributor.author | Chiang, KC | en_US |
| dc.contributor.author | Lai, CH | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Wang, TJ | en_US |
| dc.contributor.author | Chiu, HF | en_US |
| dc.contributor.author | Chen, JR | en_US |
| dc.contributor.author | McAlister, SP | en_US |
| dc.contributor.author | Chi, CC | en_US |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| dc.date.accessioned | 2014-12-08T15:18:20Z | |
| dc.date.available | 2014-12-08T15:18:20Z | |
| dc.date.issued | 2005-10-01 | en_US |
| dc.description.abstract | A very high density of 23 fF/mu m(2) has been measured in RF metal-insulator-metal (MIM) capacitors which use high-kappa TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MINI capacitors should be useful for precision RF circuits. | en_US |
| dc.identifier.doi | 10.1109/LED.2005.856708 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2005.856708 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13216 | |
| dc.identifier.wosnumber | WOS:000232208700010 | |
| dc.language.iso | en_US | en_US |
| dc.subject | capacitor | en_US |
| dc.subject | RF metal-insulator-metal (MIM) | en_US |
| dc.subject | TaTiO | en_US |
| dc.title | Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectric | en_US |
| dc.type | Article | en_US |