HIGH BREAKDOWN P-CHANNEL INSB MOSFET
| dc.citation.epage | L400 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | L398 | en_US |
| dc.citation.volume | 29 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | TU, SL | en_US |
| dc.contributor.author | LAN, WH | en_US |
| dc.contributor.author | CHIOU, TS | en_US |
| dc.contributor.author | YANG, SJ | en_US |
| dc.contributor.author | HUANG, KF | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:38Z | |
| dc.date.available | 2014-12-08T15:05:38Z | |
| dc.date.issued | 1990-03-01 | en_US |
| dc.identifier.doi | 10.1143/JJAP.29.L398 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.29.L398 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4168 | |
| dc.identifier.wosnumber | WOS:A1990CW53200006 | |
| dc.language.iso | en_US | en_US |
| dc.title | HIGH BREAKDOWN P-CHANNEL INSB MOSFET | en_US |
| dc.type | Article | en_US |