LOW-TEMPERATURE PROCESSED MOSFETS WITH LIQUID-PHASE DEPOSITED SIO2-XFX AS GATE INSULATOR
| dc.citation.epage | 318 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 316 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | YEH, CF | en_US |
| dc.contributor.author | LIN, SS | en_US |
| dc.contributor.author | HONG, TY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:17Z | |
| dc.date.available | 2014-12-08T15:03:17Z | |
| dc.date.issued | 1995-07-01 | en_US |
| dc.description.abstract | Device performances of MOSFET's with SiO2-xFx gate oxides prepared by an extremely low-temperature (15 degrees C) liquid phase deposition (LPD) method were investigated. The electrical characteristics, including threshold voltage of 2.1 V, peak effective mobility (mu(eff)) of 525 cm(2)V . s, and subthreshold suing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFET's. This demonstrates that LPD SiO2-xFx can be a suitable candidate for future gate insulators in low-temperature processed MOSFET's. | en_US |
| dc.identifier.doi | 10.1109/55.388719 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.388719 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1833 | |
| dc.identifier.wosnumber | WOS:A1995RE49100008 | |
| dc.language.iso | en_US | en_US |
| dc.title | LOW-TEMPERATURE PROCESSED MOSFETS WITH LIQUID-PHASE DEPOSITED SIO2-XFX AS GATE INSULATOR | en_US |
| dc.type | Article | en_US |