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極紫外光(EUV)微影技術從光源建造、光罩、材料、製程到奈米元件可靠度研究(III)
極紫外光(EUV)微影技術從光源建造、光罩、材料、製程到奈米元件可靠度研究(III)
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992120M009004.PDF
(2.56 MB)
Date
2010
Authors
黃遠東
HUANG YANG-TUNG
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Description
Keywords
次世代微影技術
,
極紫外光微影技術(EUVL)
,
半導體製程
,
同步輻射光源
,
EUVL檢測技術
,
Next generation lithography (NGL)
,
Extreme UV lithography (EUVL)
,
Semiconductor
,
Synchrotron radiation
,
EUV metrology technology
Citation
URI
https://www.grb.gov.tw/search/planDetail?id=2147801&docId=345725
https://ir.lib.nycu.edu.tw/handle/11536/100667
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