Ultra high-density silicon nanowires for extremely low reflection in visible regime
| dc.citation.epage | en_US | |
| dc.citation.issue | 15 | en_US |
| dc.citation.volume | 99 | en_US |
| dc.citation.woscount | 16 | |
| dc.contributor.author | Pei, Ting-Hang | en_US |
| dc.contributor.author | Thiyagu, Subramani | en_US |
| dc.contributor.author | Pei, Zingway | en_US |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:20:43Z | |
| dc.date.available | 2014-12-08T15:20:43Z | |
| dc.date.issued | 2011-10-10 | en_US |
| dc.description.abstract | We fabricated large-area, vertically aligned silicon nanowire (SiNW) arrays on Si substrates employing catalytic etching on a polystyrene nanosphere template. The density of SiNWs was as high as 10(10)/cm(2), and the bottom radii of SiNWs ranged between 30 and 60 nm. The reflection from the SiNW layer was approximately 0.1% over the spectral range of 300-800nm for SiNWs longer than 750 am. Effective medium theory was applied to explain this extremely low reflection, and it was confirmed that the incident light scatters randomly inside cone-like SiNWs, which lengthens the actual traveling path of light. (C) 2011 American Institute of Physics. [doi10.1063/1.3650266] | en_US |
| dc.identifier.doi | 10.1063/1.3650266 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3650266 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/14739 | |
| dc.identifier.wosnumber | WOS:000295883800062 | |
| dc.language.iso | en_US | en_US |
| dc.title | Ultra high-density silicon nanowires for extremely low reflection in visible regime | en_US |
| dc.type | Article | en_US |