Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

dc.citation.epage	269	en_US
dc.citation.spage	267	en_US
dc.citation.volume	26	en_US
dc.citation.woscount	14	en_US
dc.contributor.author	Lu, TY	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.date.accessioned	2019-04-02T06:00:17Z
dc.date.available	2019-04-02T06:00:17Z
dc.date.issued	2005-04-01	en_US
dc.description.abstract	A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (G(M)) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the G(M) of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the G(M) further to 29% more than the single-poly-Si gate structure without SiN capping layer.	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/148891
dc.identifier.wosnumber	WOS:000227870600015	en_US
dc.language.iso	en_US	en_US
dc.subject	mobility	en_US
dc.subject	nMOSFET	en_US
dc.subject	poly-Si	en_US
dc.subject	strain	en_US
dc.title	Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride	en_US
dc.type	Article	en_US

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