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EFFECT OF ENERGY-BAND STRUCTURE ON MAGNETORESISTANCE IN N-TYPE INSB

dc.citation.epage289en_US
dc.citation.issue3-4en_US
dc.citation.spage269en_US
dc.citation.volume19en_US
dc.contributor.authorWU, CCen_US
dc.contributor.authorTSAI, Jen_US
dc.contributor.authorWU, CCen_US
dc.contributor.department工學院zh_TW
dc.contributor.departmentCollege of Engineeringen_US
dc.date.accessioned2014-12-08T15:07:13Z
dc.date.available2014-12-08T15:07:13Z
dc.date.issued1975-01-01en_US
dc.description.abstracten_US
dc.identifier.doi10.1007/BF00116181en_US
dc.identifier.issn0022-2291en_US
dc.identifier.journalJOURNAL OF LOW TEMPERATURE PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF00116181en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5678
dc.language.isoen_USen_US
dc.titleEFFECT OF ENERGY-BAND STRUCTURE ON MAGNETORESISTANCE IN N-TYPE INSBen_US
dc.typeArticleen_US

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