Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots
| dc.citation.epage | en_US | |
| dc.citation.issue | 12 | en_US |
| dc.citation.volume | 88 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | Lin, TY | en_US |
| dc.contributor.author | Lyu, DY | en_US |
| dc.contributor.author | Chang, J | en_US |
| dc.contributor.author | Shen, JL | en_US |
| dc.contributor.author | Chou, WC | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:17:04Z | |
| dc.date.available | 2014-12-08T15:17:04Z | |
| dc.date.issued | 2006-03-20 | en_US |
| dc.description.abstract | Temperature and time evolution of the photoluminescence (PL) intensity of bimodal ZnTe/ZnSe type-II quantum dots (QDs) were investigated. A particular temperature dependence of PL was observed in large QDs. PL decay of small QDs is composed of a faster initial component and a slower tail component whereas PL decay of large QDs simply comprises a fast component. All phenomena could be understood consistently by considering charge carrier transfer mechanism, band-bending effect, and the existence of nonradiative centers in the bimodal type-II QD array. We show that excitons play an important role in the emission properties of a self-assembled type-II QD system. | en_US |
| dc.identifier.doi | 10.1063/1.2189029 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2189029 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12478 | |
| dc.identifier.wosnumber | WOS:000236250100049 | |
| dc.language.iso | en_US | en_US |
| dc.title | Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots | en_US |
| dc.type | Article | en_US |