Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate
| dc.citation.issue | 11 | en_US |
| dc.citation.woscount | 1 | en_US |
| dc.contributor.author | Hsiao, Yu-Lin | en_US |
| dc.contributor.author | Wang, Yi-Jie | en_US |
| dc.contributor.author | Chang, Chia-Ao | en_US |
| dc.contributor.author | Weng, You-Chen | en_US |
| dc.contributor.author | Chen, Yen-Yu | en_US |
| dc.contributor.author | Chen, Kai-Wei | en_US |
| dc.contributor.author | Maa, Jer-Shen | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 光電系統研究所 | zh_TW |
| dc.contributor.department | 照明與能源光電研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Institute of Photonic System | en_US |
| dc.contributor.department | Institute of Lighting and Energy Photonics | en_US |
| dc.date.accessioned | 2015-07-21T11:20:38Z | |
| dc.date.available | 2015-07-21T11:20:38Z | |
| dc.date.issued | 2014-11-01 | en_US |
| dc.description.abstract | A low-temperature (LT) AlGaN interlayer is inserted in the Al0.1Ga0.9N back barrier layer of an Al0.2Ga0.8N/GaN/Al0.1Ga0.9N double heterostructure grown on a 150mm Si substrate. It is found that the 21-nm-thick LT-AlGaN interlayer plays an important role in stress relaxation and dislocation reduction of the Al0.1Ga0.9N back barrier layer, especially for screw dislocation reduction. In addition, a buffer breakdown voltage higher than 600V is achieved, which is much higher than those of conventional heterostructures. These results demonstrate the effectiveness of combining the LT-AlGaN interlayer and the Al0.2Ga0.8N/GaN/Al0.1Ga0.9N double heterostructure on a Si substrate to increase the breakdown voltage for high-power applications. (C) 2014 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/APEX.7.115501 | en_US |
| dc.identifier.issn | 1882-0778 | en_US |
| dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/APEX.7.115501 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/124138 | |
| dc.identifier.wosnumber | WOS:000346119500040 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate | en_US |
| dc.type | Article | en_US |