A dopant-related defect in Te-doped AlInP
| dc.citation.epage | 4721 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 4720 | en_US |
| dc.citation.volume | 38 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Wu, YR | en_US |
| dc.contributor.author | Sung, WJ | en_US |
| dc.contributor.author | Wen, TC | en_US |
| dc.contributor.author | Lee, SC | en_US |
| dc.contributor.author | Lee, WI | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:46:21Z | |
| dc.date.available | 2014-12-08T15:46:21Z | |
| dc.date.issued | 1999-08-01 | en_US |
| dc.description.abstract | A deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-doped AlInP is verified to be a dopant-related defect. | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31191 | |
| dc.identifier.wosnumber | WOS:000083181600019 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Te | en_US |
| dc.subject | AlInP | en_US |
| dc.subject | dopant | en_US |
| dc.subject | defect | en_US |
| dc.subject | deep level | en_US |
| dc.subject | DLTS | en_US |
| dc.subject | depth profile measurement | en_US |
| dc.title | A dopant-related defect in Te-doped AlInP | en_US |
| dc.type | Article | en_US |