Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer

dc.citation.epageen_US
dc.citation.issue8en_US
dc.citation.volume52en_US
dc.citation.woscount0
dc.contributor.authorFu, Yi-Kengen_US
dc.contributor.authorLu, Yu-Hsuanen_US
dc.contributor.authorXuan, Rongen_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.contributor.authorSu, Yan-Kuinen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:31:58Z
dc.date.available2014-12-08T15:31:58Z
dc.date.issued2013-08-01en_US
dc.description.abstractThe work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9mW, compared with conventional LED. (C) 2013 The Japan Society of Applied Physicsen_US
dc.identifier.doi10.7567/JJAP.52.08JK05en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.52.08JK05en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/22576
dc.identifier.wosnumberWOS:000323883100133
dc.language.isoen_USen_US
dc.titleHole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layeren_US
dc.typeArticleen_US

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