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Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

dc.citation.epageen_US
dc.citation.issue26en_US
dc.citation.volume103en_US
dc.citation.woscount1
dc.contributor.authorLin, Yan-Chengen_US
dc.contributor.authorTasi, Ming-Juien_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorChen, Wei-Kuoen_US
dc.contributor.authorTanaka, Tooruen_US
dc.contributor.authorGuo, Qixinen_US
dc.contributor.authorNishio, Mitsuhiroen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:34:38Z
dc.date.available2014-12-08T15:34:38Z
dc.date.issued2013-12-23en_US
dc.description.abstractThis study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E_ conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration. (C) 2013 AIP Publishing LLC.en_US
dc.identifier.doi10.1063/1.4858968en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4858968en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/23646
dc.identifier.wosnumberWOS:000329977400023
dc.language.isoen_USen_US
dc.titleRecombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloysen_US
dc.typeArticleen_US

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