High power Al0.3Ga0.7As/In0.2Ga0.8As enhancement-mode PHEMT for low-voltage wireless communication systems
| dc.citation.epage | 1064 | en_US |
| dc.citation.issue | 18 | en_US |
| dc.citation.spage | 1063 | en_US |
| dc.citation.volume | 38 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chen, SH | en_US |
| dc.contributor.author | Chang, L | en_US |
| dc.contributor.author | Chang, EY | en_US |
| dc.contributor.author | Wu, JW | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:42:03Z | |
| dc.date.available | 2014-12-08T15:42:03Z | |
| dc.date.issued | 2002-08-29 | en_US |
| dc.description.abstract | A 20 mm-wide enhancement-mode pseudomorphic high-electron-mobility transistor (E-PHEMT) has been developed. The device has high transconductance of 490 mS/mm, and high maximum drain current of 350 mA/mm due to the use of an Al(0.3)G(4.7)As/In0.2Ga0.8As-based structure for carrier confinement. At 1.9 GHz and 3.0 V, the E-PHEMT shows 34.1 dBm (128 mW/mm) output power with power-added efficiency (PAE) of 64.5%. At 2.4 V, the maximum saturated output power is 32.25 dBm and maximum PAE is 78.5%. The E-PHEMT demonstrates excellent power performance at 1.9 GHz and below 3 V. | en_US |
| dc.identifier.doi | 10.1049/el:20020700 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20020700 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28573 | |
| dc.identifier.wosnumber | WOS:000178056000040 | |
| dc.language.iso | en_US | en_US |
| dc.title | High power Al0.3Ga0.7As/In0.2Ga0.8As enhancement-mode PHEMT for low-voltage wireless communication systems | en_US |
| dc.type | Article | en_US |