On-wafer electrooptic probing using rotational deformation modulation
| dc.citation.epage | 1230 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 1228 | en_US |
| dc.citation.volume | 12 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chen, WH | en_US |
| dc.contributor.author | Kuo, WK | en_US |
| dc.contributor.author | Huang, SL | en_US |
| dc.contributor.author | Huang, YT | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:53Z | |
| dc.date.available | 2014-12-08T15:44:53Z | |
| dc.date.issued | 2000-09-01 | en_US |
| dc.description.abstract | On-wafer electrooptic probing of two-dimensional electric-field vector (E-vector) is demonstrated by using one laser beam and one electrooptic prober. This technique utilizes both compressed-stretched deformation and rotational deformation on the index ellipsoid of the electrooptic crystal. Both experiment and simulation were performed to map the E-vector on a circuit hoard, and the measurement error is within 2.2%. | en_US |
| dc.identifier.doi | 10.1109/68.874244 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/68.874244 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30295 | |
| dc.identifier.wosnumber | WOS:000089823500038 | |
| dc.language.iso | en_US | en_US |
| dc.subject | nondestructive testing | en_US |
| dc.subject | polarimetry | en_US |
| dc.title | On-wafer electrooptic probing using rotational deformation modulation | en_US |
| dc.type | Article | en_US |