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An all-digital delay-locked loop for DDR SDRAM controller applications

dc.citation.epage202en_US
dc.citation.spage199en_US
dc.contributor.authorChung, Ching-Cheen_US
dc.contributor.authorChen, Pao-Lungen_US
dc.contributor.authorLee, Chen-Yien_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:25:07Z
dc.date.available2014-12-08T15:25:07Z
dc.date.issued2006en_US
dc.description.abstractThis paper presents an all-digital Delay-Locked Loop (DLL) for DDR SDRAM controller applications. The presented all-digital, cell-based, DLL-based five-phase multi-phase clock generator can generate the required fixed timing delay (tSD) for DDR SDRAM controller to capture the output data (DQ) correctly. The proposed DLL-based multi-phase clock generator architecture can lock to the harmonic of input clock period and still get a correct multi-phase clock output. Hence the design challenges to build a high resolution delay line with minimum intrinsic delay can be reduced. Simulation results and chip measurement results show that the proposed DLL can generate desired tSD delay with error < 7.6%). The power consumption of the proposed DLL is 4.1 mW (at DDR-200) and is 9.0mW (at DDR-400).en_US
dc.identifier.isbn1-4244-0179-8en_US
dc.identifier.journal2006 International Symposium on VLSI Design, Automation, and Test (VLSI-DAT), Proceedings of Technical Papersen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/17503
dc.identifier.wosnumberWOS:000239709500052
dc.language.isoen_USen_US
dc.titleAn all-digital delay-locked loop for DDR SDRAM controller applicationsen_US
dc.typeProceedings Paperen_US

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