Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection
| dc.citation.epage | 1921 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1914 | en_US |
| dc.citation.volume | 58 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Lee, Jian-Hsing | en_US |
| dc.contributor.author | Huang, Shao-Chang | en_US |
| dc.contributor.author | Su, Hung-Der | en_US |
| dc.contributor.author | Chen, Ke-Horng | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:30:52Z | |
| dc.date.available | 2014-12-08T15:30:52Z | |
| dc.date.issued | 2011-07-01 | en_US |
| dc.description.abstract | In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when the ESD protection device turns on. Thus, the capacitance of a gigahertz high-frequency output pad can be minimized because this scheme is without any additional trigger device or any passive component. | en_US |
| dc.identifier.doi | 10.1109/TED.2011.2143717 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2011.2143717 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22034 | |
| dc.identifier.wosnumber | WOS:000291952900013 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Electrostatic discharge (ESD) | en_US |
| dc.subject | radio frequency | en_US |
| dc.subject | silicon-controlled rectifier (SCR) | en_US |
| dc.title | Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection | en_US |
| dc.type | Article | en_US |